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| P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY PIN CONFIGURATION IN1 IN2 IN3 INPUT 1 2 3 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10 DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. IN4 4 IN5 5 OUTPUT IN6 6 FEATURES q Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = -40 to +85C) IN7 IN8 GND 7 8 9 NC Package type 18P4G(P) NC 1 20 NC IN1 2 19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 NC APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals IN2 3 IN3 4 IN4 5 INPUT IN5 6 IN6 7 IN7 8 IN8 9 OUTPUT FUNCTION The M63806P/FP/KP each have eight circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. GND 10 NC : No connection 20P2N-A(FP) Package type 20P2E-A(KP) CIRCUIT DIAGRAM OUTPUT INPUT 2.7K 10K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L M63806P M63806FP M63806KP Ratings -0.5 ~ +35 300 -0.5 ~ +35 1.79 1.10 0.68 -40 ~ +85 -55 ~ +125 Unit V mA V W C C Ta = 25C, when mounted on board RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Parameter Output voltage Collector current IC (Current per 1 circuit when 8 circuits are coming on simultaneously) VIN Input voltage M63806P M63806FP M63806KP Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% Test conditions Limits min 0 0 0 0 0 0 0 0 typ -- -- -- -- -- -- -- -- max 35 250 170 250 130 250 100 20 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol V (BR) CEO VCE(sat) VIN(on) hFE Parameter Collector-emitter breakdown voltage Test conditions Limits min 35 -- -- 2.4 50 typ -- -- -- 3.5 -- max -- 0.2 0.8 4.2 -- Unit V V V -- ICEO = 10A IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA "On" input voltage IIN = 1mA, IC = 10mA DC amplification factor VCE = 10V, IC = 10mA SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 125 250 max -- -- Unit ns ns Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY TIMING DIAGRAM Vo 50% 50% NOTE 1 TEST CIRCUIT INPUT Measured device PG RL OUTPUT INPUT OUTPUT 50 CL 50% 50% ton (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 3V (2)Input-output conditions : RL = 220, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M63806P Input Characteristics 8 Ta = -40C Power dissipation Pd (W) M63806FP Input current II (mA) 1.5 6 1.0 M63806KP 0.931 4 Ta = 25C 0.5 0.572 0.354 2 Ta = 85C 0 0 25 50 75 85 100 0 0 5 10 15 20 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M63806P) 400 400 Input voltage VI (V) Duty Cycle-Collector Characteristics (M63806P) Collector current Ic (mA) 300 ~ Collector current Ic (mA) 300 ~ *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 200 200 100 0 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY Duty Cycle-Collector Characteristics (M63806FP) 400 400 Duty Cycle-Collector Characteristics (M63806FP) Collector current Ic (mA) 300 200 ~ *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C Collector current Ic (mA) 300 200 100 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63806KP) 400 400 Duty cycle (%) Duty Cycle-Collector Characteristics (M63806KP) Collector current Ic (mA) 300 ~ Collector current Ic (mA) 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 100 100 0 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 0 20 40 60 80 100 Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 250 Ta = 25C IB = 2mA IB = 3mA Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 100 80 Ta = 25C VI = 7V VI = 6V VI = 5V Collector current Ic (mA) Collector current Ic (mA) 200 IB = 1.5mA IB = 1mA 150 60 VI = 2V VI = 4V VI = 3V 100 IB = 0.5mA 40 20 50 0 0 0.2 0.4 0.6 0.8 0 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output saturation voltage VCE(sat) (V) Jan. 2000 P ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som IM REL Y NAR I MITSUBISHI SEMICONDUCTOR M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY Output Saturation Voltage Collector Current Characteristics 100 II = 2mA DC Amplification Factor Collector Current Characteristics 103 7 5 3 2 VCE 10V Ta = 25C Collector current Ic (mA) 80 Ta = -40C Ta = 25C Ta = 85C 60 DC amplification factor hFE 0.20 102 7 5 3 2 40 20 0 0 0.05 0.10 0.15 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Output saturation voltage VCE(sat) (V) Grounded Emitter Transfer Characteristics 50 VCE = 4V Grounded Emitter Transfer Characteristics 250 VCE = 4V Collector current Ic (mA) Collector current Ic (mA) 40 Ta = 25C 200 Ta = 85C 30 Ta = 85C Ta = -40C 150 Ta = 25C 20 100 50 Ta = -40C 10 0 0 0.4 0.8 1.2 1.6 2.0 0 0 1 2 3 4 5 Input voltage VI (V) Input voltage VI (V) Jan. 2000 |
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